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Figure 3 from Wafer-scale production of uniform InAs(y)P(1-y) nanowire array on silicon for heterogeneous integration. | Semantic Scholar
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Figure 2 from Wafer-scale production of uniform InAs(y)P(1-y) nanowire array on silicon for heterogeneous integration. | Semantic Scholar
Several lowest electron energy levels for a uniform InAs nanocrystal of... | Download Scientific Diagram
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PDF) Wafer-Scale Production of Uniform InAs y P 1– y Nanowire Array on Silicon for Heterogeneous Integration | Parsian Mohseni - Academia.edu
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Generation of highly circularly polarized light from uniform InAs/GaAs quantum dots
Control of photoluminescence wavelength from uniform InAs quantum dots by annealing - ScienceDirect
Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium | Scientific Reports
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Erratum to: Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors | SpringerLink
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Spin Relaxation Dynamics in Highly Uniform InAs Quantum Dots
